Strong electron confinement by stacking-fault-induced fractional steps on Ag(111) surfaces
نویسندگان
چکیده
منابع مشابه
Generalized stacking fault energy surfaces and dislocation properties of aluminum
We have employed the semidiscrete variational generalized Peierls-Nabarro model to study the dislocation core properties of aluminum. The generalized stacking fault energy surfaces entering the model are calculated by using first-principles Density Functional Theory (DFT) with pseudopotentials and the embedded atom method (EAM). Various core properties, including the core width, splitting behav...
متن کاملStacking-fault nucleation on Ir(111).
Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of ada...
متن کاملStacking fault structure in shear-induced colloidal crystallization.
We report measurements of the spatial distribution of stacking faults in colloidal crystals formed by means of an oscillatory shear field at a particle volume fraction of 52% in a system where the pair potential interactions are mildly repulsive. Stacking faults are directly visualized via confocal laser scanning microscopy. Consistent with previous scattering studies, shear orders the initiall...
متن کامل“scrubbing” Process of Cu Surfaces Induced by Electron Bombardment
We studied energy distribution of electrons emitted from samples of the real Cu surface used in the Large Hadron Collider (LHC). The spectra have been detected as a function of scrubbing conditions and have been analyzed by dividing the whole energy range into three energy regions, conventionally termed reflected, rediffused and true-secondary electrons. We observe, for fixed electron impact en...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2010
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.82.113413